| 摘要 |
PROBLEM TO BE SOLVED: To cheaply form a semiconductor layer on an insulator while loosening a restriction of a width of a semiconductor layer which can be formed on the insulator. SOLUTION: Method of manufacturing a semiconductor substrate and a semiconductor device comprise the steps of forming a second semiconductor layer 3 on a first semiconductor layer 2 by means of an epitaxial growth; providing a support 5 at a side wall of a groove 6 formed on a semiconductor substrate 1; forming a groove 8 for exposing the second semiconductor layer 3; forming a cavity 9 between the semiconductor substrate 1 and the second semiconductor layer 3, by contacting etching gas or etchant with the first semiconductor layer 2 through the groove 8; and forming an oxide film 10 in the cavity 9 between the semiconductor substrate 1 and the second semiconductor layer 3, by performing a thermal oxidation of the semiconductor substrate 1, the second semiconductor layer 3, and the support 5. COPYRIGHT: (C)2007,JPO&INPIT
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