| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems wherein parasitic bipolar transistor operation results since a breakdown current passes under a source region for surrounding a back gate region in a conventional semiconductor device. SOLUTION: The semiconductor device 1 is a vertical MOSFET, and has a plurality of unit cells 10 and a gate electrode 20. Each unit cell 10 includes a back gate region 12 formed on a semiconductor substrate, and a source region 14 that is formed on the semiconductor substrate and is provided adjacent to the periphery of the back gate region 12 in a plan view. The back gate region 12 is adjacent to the gate electrode 20 partially. Concretely speaking, the back gate region 12 is rectangular in a plan view, and is adjacent to the gate electrode 20 at a set of two opposing sides in the four peripheral sides, thus suppressing the generation of the parasitic bipolar transistor operation by the breakdown current. COPYRIGHT: (C)2007,JPO&INPIT
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