发明名称 |
Semiconductor device and method of forming the same as well as a photo-mask used therein |
摘要 |
A method of forming a device pattern of a semiconductor device. The method includes the steps of carrying out an over-exposure to a resist film using a mask which has transmission regions which are positioned about a circumference of each of intended patterns of a resist film. Then carrying out a development of the resist film to form a resist pattern having the intended patterns. And then forming a device pattern of a semiconductor device by use of the resist pattern. |
申请公布号 |
US7118835(B2) |
申请公布日期 |
2006.10.10 |
申请号 |
US20040938504 |
申请日期 |
2004.09.13 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
TAKEUCHI MAMI |
分类号 |
G01F9/00;H01L21/027;G03F1/08;G03F1/14;G03F1/36;G03F1/68;H01L21/8242;H01L27/02;H01L27/108 |
主分类号 |
G01F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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