发明名称 Semiconductor device and method of forming the same as well as a photo-mask used therein
摘要 A method of forming a device pattern of a semiconductor device. The method includes the steps of carrying out an over-exposure to a resist film using a mask which has transmission regions which are positioned about a circumference of each of intended patterns of a resist film. Then carrying out a development of the resist film to form a resist pattern having the intended patterns. And then forming a device pattern of a semiconductor device by use of the resist pattern.
申请公布号 US7118835(B2) 申请公布日期 2006.10.10
申请号 US20040938504 申请日期 2004.09.13
申请人 NEC ELECTRONICS CORPORATION 发明人 TAKEUCHI MAMI
分类号 G01F9/00;H01L21/027;G03F1/08;G03F1/14;G03F1/36;G03F1/68;H01L21/8242;H01L27/02;H01L27/108 主分类号 G01F9/00
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