| 摘要 |
<p>A flash memory device and a method for manufacturing the same are provided to prevent a leakage current and a parasitic transistor by forming a dummy active region on a transistor active region. A substrate(10) having a cell region(A), a first peripheral region(B) and a second peripheral region(C) is prepared. A triple well is formed in the cell region. At this time, the end portion of the triple well is formed in the second peripheral region. A high-voltage gate oxide layer(18) is formed on the second peripheral region. A first trench is formed in the cell region. A second trench with a relatively deep depth is formed in the second peripheral region and the cell region, wherein a dummy active region(D) is formed on the first peripheral region. A first isolation layer(24a) is formed in the first trench, and a second isolation layer(24b) is formed in the second trench. A low-voltage gate oxide layer(26) is formed on the resultant structure except for the dummy active region. A floating gate electrode(28a) is formed on the cell region, a gate electrode(28c) is formed on the first and the second peripheral region, and a polysilicon pattern(28b) is formed on the dummy active region of the second peripheral region.</p> |
