| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain an aqueous composition useful for polishing conducting, semi-conducting, and dielectric materials on a semiconductor wafer. <P>SOLUTION: The composition comprises 0.01 to 5 wt% zwitterionic compound, 0.01 to 5 wt% cationic compound, 0.5 to 10 wt% abrasive, 0 to 5 wt% inorganic acids and salts thereof, and balance water, wherein the abrasive is fumed silica that has only been exposed to an acidic pH. The composition and method provide unexpected selectivity for removing conductive and semi-conductive layers relative to dielectric layers. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
