发明名称 |
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus |
摘要 |
A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
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申请公布号 |
US2006202188(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
US20060435932 |
申请日期 |
2006.05.18 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
UETA YOSHIHIRO;TAKAKURA TERUYOSHI;KAMIKAWA TAKESHI;TSUDA YUHZOH;ITO SHIGETOSHI;YUASA TAKAYUKI;TANEYA MOTOTAKA;MOTOKI KENSAKU |
分类号 |
H01L31/109;H01L29/06;H01L31/0328;H01L31/0336;H01L31/072;H01S5/00;H01S5/02;H01S5/22;H01S5/32;H01S5/343 |
主分类号 |
H01L31/109 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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