| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride system semiconductor light emitting diode which improves chip yield inside a wafer and further improves light output efficiency. <P>SOLUTION: The nitride system semiconductor light emitting diode has a light transmitting ohmic electrode 406 formed on a nitride semiconductor element layer comprising an active layer, a dielectric layer 407 formed on the light transmitting p-type ohmic electrode 406, and a light reflecting metallic layer 409 formed on the dielectric layer 407. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
