发明名称 |
Two-terminal semiconductor overcurrent limiter |
摘要 |
<p>A semiconductor overcurrent limiter having input and output terminals (1, 2) includes a depletion type vertical MOSFET (10), a depletion type lateral MOSFET (20), and a zener diode (4). A back gate (25) of the lateral MOSFET (20) is formed in common with a drain electrode of the vertical MOSFET (10) to provide the input terminal (1), and a gate (13) of the vertical MOSFET (10) is connected to an anode of the zener diode (4) to provide the output terminal (2). Further, a source electrode (12) of the vertical MOSFET (10) is connected to source and gate electrodes (22, 23) of the lateral MOSFET (20) and a cathode electrode (6) of the zener diode (4). <IMAGE></p> |
申请公布号 |
EP1168449(B1) |
申请公布日期 |
2006.08.30 |
申请号 |
EP20010114966 |
申请日期 |
2001.06.20 |
申请人 |
SHINDENGEN ELECTRIC MANUFACTURING COMPANY, LIMITED |
发明人 |
OHSHIMA, KUNIHITO;SHIROTA, MASAYA;TEZUKA, TOSHIKAZU |
分类号 |
H01L27/02;H02H9/02;H03K17/08;H03K17/687 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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