发明名称 Two-terminal semiconductor overcurrent limiter
摘要 <p>A semiconductor overcurrent limiter having input and output terminals (1, 2) includes a depletion type vertical MOSFET (10), a depletion type lateral MOSFET (20), and a zener diode (4). A back gate (25) of the lateral MOSFET (20) is formed in common with a drain electrode of the vertical MOSFET (10) to provide the input terminal (1), and a gate (13) of the vertical MOSFET (10) is connected to an anode of the zener diode (4) to provide the output terminal (2). Further, a source electrode (12) of the vertical MOSFET (10) is connected to source and gate electrodes (22, 23) of the lateral MOSFET (20) and a cathode electrode (6) of the zener diode (4). <IMAGE></p>
申请公布号 EP1168449(B1) 申请公布日期 2006.08.30
申请号 EP20010114966 申请日期 2001.06.20
申请人 SHINDENGEN ELECTRIC MANUFACTURING COMPANY, LIMITED 发明人 OHSHIMA, KUNIHITO;SHIROTA, MASAYA;TEZUKA, TOSHIKAZU
分类号 H01L27/02;H02H9/02;H03K17/08;H03K17/687 主分类号 H01L27/02
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