NITRIDE SEMICONDUCTOR MATERIAL AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL

摘要

A nitride semiconductor material wherein a first nitride semiconductor layer group is provided on a semiconductor substrate or a dielectric substrate is characterized in that a surface of the first nitride semiconductor group has an RMS of 5nm or less, an X-ray half width fluctuation within ±30%, a surface light reflectivity of 15% or more and its fluctuation at ±10% or less, and a thickness of the first nitride semiconductor group is 25µm or more. The nitride semiconductor material has excellent uniformity and stability, is manufactured at a low manufacturing cost and is useful as a substrate for nitride semiconductor devices.