发明名称 SOLID STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a solid state imaging device excellent in optical property by preventing etching of a shielding film or an insulating film in the case of forming a hole at a flattened film, and further improving light converging efficiency also in the case of microfabrication. SOLUTION: The solid state imaging device includes a photoelectric converter and a charge transfer provided with a charge-transferring electrode for transferring charge generated by the photoelectric converter and has an optical waveguide which confines and propagates incident light to guide it to the photoelectric converter. The optical waveguide includes a translucent film having a prescribed refractive index and a light guide function at the hole formed in an area equivalent to the photoelectric converter and the top of its periphery part at the flattened film covering the surface of the solid state imaging device, and a second translucent film formed so as to surround the first translucent film or so as to cover at least the whole of the photoelectric converter on the side of the lower layer of the flattened film. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006222366(A) 申请公布日期 2006.08.24
申请号 JP20050036112 申请日期 2005.02.14
申请人 FUJI FILM MICRODEVICES CO LTD;FUJI PHOTO FILM CO LTD 发明人 HANAOKA HIDEYASU;YASUUMI SADAJI
分类号 H01L27/14;H01L27/148;H04N5/335;H04N5/369;H04N5/372 主分类号 H01L27/14
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