| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a contact hole with which good contact can be obtained. SOLUTION: When an n-type or a p-type impurity diffusion layer 52 is formed on a surface of a monocrystalline silicon substrate 51, the impurity concentration in the impurity diffusion layer 52 is appropriately determined. This can properly suppress and optimize growth of a titanium silicide layer 57 at the time of heat treatment using an RTN method shown in Figure (A). As a result, even when the junction depth of the impurity diffusion layer 52 is shallow, the titanium silicide layer 57 formed under the bottom surface of a contact hole 55 can be prevented from being overgrown to penetrate the impurity diffusion layer 52 at the time of heat treatment using the RTN method in a process 4, thereby avoiding occurrence of contact leakage causing the titanium silicide layer 57 and the monocrystalline silicon substrate 51 to be directly connected to each other to establish a short circuit. COPYRIGHT: (C)2006,JPO&NCIPI
|
