| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can avoid false detection of a memory cell having a small cell capacitance, thereby preventing an increase in test time. SOLUTION: The semiconductor memory device comprises a sense amplifier 30 provided between first and second mats 11 and 12, switches (21, 22) for controlling connections between the first and second mats and first and second bit lines, respectively, and a means for controlling a switch corresponding to a selected mat and a switch corresponding to a non-selected mat to be both turned ON when an input test mode signal indicates a test mode. COPYRIGHT: (C)2006,JPO&NCIPI
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