| 摘要 |
The present invention provides a method for analyzing critical defects in analog integrated circuits. The method for analyzing critical defects, among other possible steps, may include fault testing a power field effect transistor ( 120 ) portion of an analog integrated circuit ( 115 ) to obtain electrical failure data. The method may further include performing an in-line optical inspection of the analog integrated circuit ( 115 ) to obtain physical defect data, and correlating the electrical failure data and physical defect data to analyze critical defects.
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