| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser device and the semiconductor laser device, wherein an occurrence of a defective device can be precluded, in addition, the reliability of the semiconductor laser device can be enhanced, and an electric resistance of the semiconductor laser device can be lowered. SOLUTION: Etching is performed by using a resist pattern 24 as an etching mask, whereby a dielectric film is removed on an upper face of an In<SB>0.5</SB>Ga<SB>0.5</SB>P selection removal layer 10, and all the upper face of the In<SB>0.5</SB>Ga<SB>0.5</SB>P selection removal layer 10 is exposed. By removing the In<SB>0.5</SB>Ga<SB>0.5</SB>P selection removal layer 10, even if a residue of the dielectric film remains on the upper face of the In<SB>0.5</SB>Ga<SB>0.5</SB>P selection removal layer 10, the residue of this dielectric film can be removed along with the In<SB>0.5</SB>Ga<SB>0.5</SB>P selection removal layer 10. COPYRIGHT: (C)2006,JPO&NCIPI
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