发明名称 |
Single metal gate CMOS device design |
摘要 |
A semiconductor device includes a PMOS transistor formed on a substrate structure. The PMOS transistor includes a source and a drain each including a diffusion region in the substrate structure, a channel region defined between the source and the drain, a gate dielectric over the channel region, and a gate electrode over the gate dielectric. The gate electrode is formed of a material having an n-type work function with respect to the semiconductor substrate and is treated such that a work function of the gate electrode is converted into a mid-gap type or p-type work function with respect to the semiconductor substrate.
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申请公布号 |
US2006172480(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
US20050048877 |
申请日期 |
2005.02.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG CHIH-HAO;CHEN SHANG-CHIH;TSAI CHING-WEI |
分类号 |
H01L21/8238;H01L21/3205;H01L21/8234 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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