发明名称 THIN-FILM TRANSISTOR DISPLAY PANEL AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To decrease the fraction defective of thin-film transistors by simplifying the manufacturing stage of a thin-film transistor panel. SOLUTION: The manufacturing method of the thin-film transistor display panel includes stages of: forming gate lines on a substrate; forming a 1st insulating film on the gate lines; forming a semiconductor layer on the 1st insulating film; forming data lines and drain electrodes on the semiconductor layer; vapor-depositing a 2nd insulating film on the data lines and drain electrodes; forming a photosensitive film on the 2nd insulating film; exposing at least portions of the drain electrodes and at least a portion of the substrate by etching the 2nd insulating film and 1st insulating film by using the photosensitive film as a mask; removing portions of the exposed drain electrodes; vapor-depositing a conductive film; and forming pixel electrodes coupled to the drain electrodes by removing the photosensitive film. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006201789(A) 申请公布日期 2006.08.03
申请号 JP20060011942 申请日期 2006.01.20
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIN SHOSHU;KIM JOO-HAN;CHOI HEE-HWAN;HAN KYOUNG-TAI;KIM SHUSHIN
分类号 G09F9/30;G02F1/1368;H01L21/336;H01L29/786 主分类号 G09F9/30
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