发明名称 |
THIN-FILM TRANSISTOR DISPLAY PANEL AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To decrease the fraction defective of thin-film transistors by simplifying the manufacturing stage of a thin-film transistor panel. SOLUTION: The manufacturing method of the thin-film transistor display panel includes stages of: forming gate lines on a substrate; forming a 1st insulating film on the gate lines; forming a semiconductor layer on the 1st insulating film; forming data lines and drain electrodes on the semiconductor layer; vapor-depositing a 2nd insulating film on the data lines and drain electrodes; forming a photosensitive film on the 2nd insulating film; exposing at least portions of the drain electrodes and at least a portion of the substrate by etching the 2nd insulating film and 1st insulating film by using the photosensitive film as a mask; removing portions of the exposed drain electrodes; vapor-depositing a conductive film; and forming pixel electrodes coupled to the drain electrodes by removing the photosensitive film. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006201789(A) |
申请公布日期 |
2006.08.03 |
申请号 |
JP20060011942 |
申请日期 |
2006.01.20 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIN SHOSHU;KIM JOO-HAN;CHOI HEE-HWAN;HAN KYOUNG-TAI;KIM SHUSHIN |
分类号 |
G09F9/30;G02F1/1368;H01L21/336;H01L29/786 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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