发明名称 POWER SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To compact the whole shape of a power semiconductor device having attached cooling fins thereto. <P>SOLUTION: There is provided the power semiconductor device having two cooling fins and having at least two power modules, each of which has a mold surface molded by a resin on its first principal surface and has a heat radiating surface on its second principal surface present in the rear of its first principal surface. In the power semiconductor device, the power modules are so disposed as to use the two paired ones as a unit, and in the paired two power modules, their mold surfaces are so disposed oppositely to each other as to contact pressingly with the respective heat sinks of the cooling fins their respective heat radiating surfaces oriented to the reverse externals by the paired disposals of the two power modules, and as to sandwich the plurality of power modules between the two cooling fins. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006190972(A) 申请公布日期 2006.07.20
申请号 JP20050300261 申请日期 2005.10.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 YOSHIMATSU NAOKI;YOSHIDA TAKANOBU;SHINOHARA TOSHIAKI
分类号 H01L23/36;H01L23/40;H01L25/07;H01L25/18;H02M7/48 主分类号 H01L23/36
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