| 摘要 |
A semiconductor device with a chip having at least one metallic bond pad ( 101 ) over weak insulating material ( 102 ). In contact with this bond pad is a flattened metal ball ( 104 ) made of at least 99.999 % pure metal such as gold, copper, or silver. The diameter ( 104 a) of the flattened ball is less than or equal to the diameter ( 103 a) of the bond pad. A wire ( 110 ) is connected to the bond pad so that the wire has a thickened portion ( 111 ) conductively attached to the flattened metal ball. The wire is preferably made of composed metal such as gold alloy. The composition of the flattened ball is softer than the wire. This softness of the flattened ball protects the underlying insulator against damage caused by pressure or stress, when the composed ball is attached.
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