| 发明名称 |
Method of planarizing an inter-metal insulation film |
| 摘要 |
A method for forming a planarized inter-metal insulation film is provided. The method includes applying a CMP process to an insulation film as controlled by a polish-stop layer pattern formed on an underlying metal wiring pattern. A PAE based material may be used to form the polish-stop layer.
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| 申请公布号 |
US2006148258(A1) |
申请公布日期 |
2006.07.06 |
| 申请号 |
US20050298678 |
申请日期 |
2005.12.12 |
| 申请人 |
YUN SE-RAH;HONG CHANG-KI;LEE JAE-DONG |
发明人 |
YUN SE-RAH;HONG CHANG-KI;LEE JAE-DONG |
| 分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
| 代理机构 |
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