Method of forming gate insulation layers of different characteristics

摘要

The present invention describes a method for forming different types of gate insulation layers, wherein the formation of one type of gate insulation layer is highly decoupled from the formation of the other type of gate insulation layer. Thus, in some embodiments, critical oxidation processes may finely be tuned on an individual basis. This is accomplished by providing a mask layer that may substantially prevent any impact on an initially made insulation layer during a subsequent manufacturing process of a second gate insulation layer.