发明名称 Selective reactive ion etching of wafers
摘要 The invention comprises a device for assisting in the selective reactive ion etching of wafers comprising, a graphite base plate including an opening for housing a wafer, and a plurality of graphite strips that can be arranged over the graphite base plate to select a site of a wafer housed in the base plate for etching.
申请公布号 US2006138084(A1) 申请公布日期 2006.06.29
申请号 US20040022014 申请日期 2004.12.23
申请人 发明人 YE SIM K.;TONG TAN K.
分类号 C23F1/00 主分类号 C23F1/00
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