Semiconductor device with semiconductor chip formed by using wide gap semiconductor as base material

摘要

A switching chip using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink, an insulating substrate and a conductive plate, with a first conductive layer sandwiched in between. Further, a diode chip having a smaller area than a cathode electrode and using a wide gap semiconductor as the base material is located on the cathode electrode which has a smaller area than an anode electrode, with a second conductive layer sandwiched in between. A closed container encloses every structural component except an exposed portion of a bottom surface in the interior space.