发明名称 |
CAP LAYERS AND/OR PASSIVATION LAYERS FOR NITRIDE-BASED TRANSISTORS, TRANSISTOR STRUCTURES AND METHODS OF FABRICATING SAME |
摘要 |
<p>High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.</p> |
申请公布号 |
CA2588114(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
CA20052588114 |
申请日期 |
2005.08.31 |
申请人 |
CREE, INC. |
发明人 |
SMITH, RICHARD PETER;SHEPPARD, SCOTT;SAXLER, ADAM WILLIAM |
分类号 |
H01L29/778;H01L21/318;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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