| 摘要 |
A top drain MOSgated device has its drain on the top of semiconductor die and its source on the bottom of the die substrate. Spaced parallel trenches extend from the die top surface through a drift region, a channel region and terminate on the substrate region. The bottoms of each trench receive a silicide conductor to short the substrate source to channel regions. The silicide conductors are then insulated at their top surfaces and gate electrodes are placed in the same trenches as those receiving the channel/source short.
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