| 发明名称 |
High voltage switch circuit |
| 摘要 |
The present invention discloses a high voltage switch circuit of a semiconductor device which can reduce a discharge time by supplying a higher voltage than a power voltage to a gate terminal of a discharge transistor in a discharge unit for discharging a high voltage.
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| 申请公布号 |
US7053689(B2) |
申请公布日期 |
2006.05.30 |
| 申请号 |
US20040879848 |
申请日期 |
2004.06.29 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM YOUNG JOO |
| 分类号 |
H03K17/04;H03K17/16;H03K17/0412;H03K17/06;H03K17/10;H03K17/687 |
主分类号 |
H03K17/04 |
| 代理机构 |
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