| 摘要 |
A semiconductor chip capable of implementing wire bonding over active circuits (BOAC) is provided. The semiconductor chip includes a bonding pad structure, a metal-metal capacitor formed by at least a pair of metal electrodes on the same plane underneath the bonding pad structure, at least an interconnection metal layer, at least a via plug between the interconnection metal layer and the bonding pad structure, and an active circuit situated underneath the bonding pad structure on a semiconductor bottom.
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