发明名称 PHYSICAL VAPOR DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a physical vapor deposition apparatus which forms a film on a substrate by forming particles with the use of a non-migration-type plasma torch that does not cause outgassing even in an ultra-high vacuum environment, accelerating the particles with a supersonic gas flow, and depositing them onto the substrate. SOLUTION: This physical vapor deposition apparatus comprises: evaporation chambers (10 and 20) having the plasma torches (16 and 26) and evaporation sources (15 and 25); a film-forming chamber 30 having a supersonic nozzle 35 and a substrate 33 to be film-formed, therein. Each of the plasma torches comprises: an approximately cylindrical conductive anode 40; an insulation tube 50 that is inserted inside the anode 40 and is made from a macromolecular or a non-macromolecular material, which releases a smaller amount of gas than bakelite; and a bar-shaped cathode 60 inserted inside the insulation tube 50. The physical vapor deposition apparatus generates plasma by applying voltage to the anode 40 and the cathode 60; forms the particles from the evaporation sources (15 and 25) by using the plasma; spouts the particles through a supersonic nozzle 35 to merge them into the supersonic gas flow; and physically vapor-deposits them on the substrate 33 to be film-formed. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006111921(A) 申请公布日期 2006.04.27
申请号 JP20040300122 申请日期 2004.10.14
申请人 TAMA TLO KK 发明人 YUMOTO ATSUSHI;NIWA NAOKI;HIROKI FUJIO;SHIODA KAZUMICHI;YAMAMOTO TAKEHISA
分类号 C23C14/32;C23C14/26 主分类号 C23C14/32
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