| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively form a semiconductor layer on a insulator while the thickness of the layer is made to be accurately controlled. SOLUTION: A first semiconductor layer 2 is formed on a semiconductor substrate 1 through epitaxial growth, and a second semiconductor layer 3 is formed on the substrate 1 to cover the first semiconductor layer 2. In addition, an oxidation preventing film 5 is formed on the second semiconductor layer 3. Thereafter, the oxidation preventing film 5 on an element separating region is removed, and an opening 6 through which part of the end of the first semiconductor layer 2 is exposed is formed along the paired edges of the first semiconductor layer 2. Then the first semiconductor layer 2 is etched off by bringing an etching gas or etching liquid into contact with the layer 2 through the opening 6. In addition, a buried oxidized film 8a is formed in the cavity 7 between the semiconductor substrate 1 and the second semiconductor layer 3 and, at the same time, an element separating oxidized film 8b is formed around the second semiconductor layer 3 by thermally oxidizing the substrate 1 and second semiconductor layer 3 by using the oxidation preventing film 5 as a mask. COPYRIGHT: (C)2006,JPO&NCIPI
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