| 摘要 |
Electrical connection of an insulated-gate bipolar transistor (IGBT) chip mounted on an integrated circuit chip (10) comprises soldering electrodes (26,28), and forming control grid or gate (28) electrodes on a conducting plate (28) with projecting sections having connection plots which are joined by soldering to the corresponding connection pads. The connection pads (14,16) are covered with a metallic layer, e.g. aluminum, and the process prior to soldering comprises deoxidation of the connection pads, deposition of an antioxidant material, deposition of solder, positioning of the chips with projecting sections to the connection pads, and treatment in an oven for fusion. The antioxidant material is from the group containing nickel, chromium, gold, or an alloy of these metals. The deoxidation is by treating the chips with nitric acid. The plate (20) has an opening for the passage of the gate electrode and the interposition of an insulating material in the formation of the emitter electrodes. In the formation of the emitter electrodes, the gate electrode is formed, and also a supply track insulated from the rest of the chip. The plate (20) is made of anodized metal, e.g. aluminum, and gate electrode production comprises forming a conducting layer by metallization of the anodized plot surface, forming the supply track by metallization of the anodized chip surface, and deposition of a layer of the antioxidant material on the plots. The supply track after formation is covered with a metallic layer. The covering of the metallized track is done by anodizing. |
