| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, and a semiconductor device by which highly-accurate dimensional control can be realized. <P>SOLUTION: At first, each semiconductor chip 12 in a semiconductor wafer 10 is divided into a plurality of setting regions 14 at a layout design step. A plurality of inspection regions 13 are provided in each setting region 14. A lattice-shaped pattern is laid out in each inspection region 13 at a single wiring width and a single wiring pitch specified by referring to a device pattern in the setting region 14 including the inspection region 13. Subsequently, the lattice-shaped pattern formed on the semiconductor wafer 10 is measured by using positional information of a plurality of the inspection regions 13 obtained at the layout design step with an optical dimension measuring device at a manufacture and inspection step of the semiconductor wafer 10. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
