| 摘要 |
An integrated circuit device comprises a memory cell block, a word line selecting circuit and a driving circuit. The memory cell block comprises memory cells connected in series. The memory cell comprises a cell transistor including a gate which is connected to a word line, and a ferroelectric capacitor connected to terminals of the cell transistor. The word line selecting circuit successively selects the word lines connected to the cell transistors in the memory cells in the memory cell block in response to address signals successively input from an outside of the device, during an active cycle. The driving circuit applies a given voltage between ends of a current path provided of the cell transistors in the memory cells in the memory cell block, during a time period for which the word lines connected to the cell transistors are successively selected by the word line selecting circuit.
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