发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
摘要 The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode on the gate electrode; and a pixel electrode electrically connected to the drain electrode.
申请公布号 KR20060028541(A) 申请公布日期 2006.03.30
申请号 KR20040077519 申请日期 2004.09.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JE HUN;CHO, BEOM SEOK;JEONG, CHANG OH;KIM, JOO HAN
分类号 G02F1/136 主分类号 G02F1/136
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