发明名称 |
MOSFET and method for fabricating the same |
摘要 |
The semiconductor device of the present invention includes: a gate insulating film formed on a semiconductor region of a first conductivity type; a gate electrode formed on the gate insulating film; and a channel doped layer of the first conductivity type formed in the semiconductor region beneath the gate electrode. The channel doped layer contains carbon as an impurity.
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申请公布号 |
EP1641046(A2) |
申请公布日期 |
2006.03.29 |
申请号 |
EP20050019440 |
申请日期 |
2005.09.07 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
发明人 |
NODA, TAIJI |
分类号 |
H01L29/78;H01L21/225;H01L21/265;H01L21/336;H01L29/10 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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