| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide the manufacturing method of an SOI (silicon on insulator) wafer which has a relatively thinner silicon oxide film and an SOI layer, and is difficult of curvature generation at a heat treatment performed in a device process. <P>SOLUTION: A base wafer 7 and a bond wafer 1 are stuck through silicon oxide film. The thickness t1 of the silicon oxide film 2 and the thickness t2 of the SOI layer after being stuck are set within a range that 0.1λ<t<SB>OP</SB><2λis satisfied, and (t1×n1)/(t2×n2) is 0.2 or more and 3 or less: where n1 (a refractive index of infra-red wave length region of SiO<SB>2</SB>making the silicon oxide film 2)=1.5, n2 (a refractive index of Si making an SOI layer 15)=3.5, and t<SB>OP</SB>(an optical thickness in the infra-red wave length region of the silicon oxide film 2 and the SOI layer 15)=n1×t1+n2×t2. And, a formation density of precipitation of oxygen object in the base wafer after joint heat treatment is adjusted to under 1×10<SP>9</SP>/cm<SP>3</SP>by nucleus killer heat treatment performed in advance of the joint heat treatment. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
