| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that can be improved in light extraction efficiency. <P>SOLUTION: The semiconductor light emitting device comprises a light emission layer constituent portion 30; a transparent p-type GaP wafer 11 that is integrally joined to the p-type principal plane of the light emission layer constituent portion 30, and that is wide on the side closer to the light emission layer constituent portion 30 while getting narrower as it goes away from the light emission layer constituent portion 30, so as to have an inclined external surface and wherein current can be caused to flow; a p-side electrode 41 installed on the surface of the p-type GaP wafer 11 opposite from the one joined to the light emission layer constituent portion 30; a transparent n-type GaP wafer 12 that is integrally joined to an n-type principal plane of the light emission layer constituent portion 30, and that is wide on the side closer to the light emission layer constituent portion 30 while getting narrower as it goes away from the light emission layer constituent portion 30, so as to have an inclined external surface and wherein current can be caused to flow; n-side electrode 42 installed on the surface of the n-type GaP wafer 12 opposite from the one joined to the light emission layer constituent portion 30; and an inversion layer 21 that is formed in the p-type GaP wafer 11, so that current may be intensively caused to flow in a central portion of the surface of the p-type GaP wafer 11 that is joined to the light emission layer constituent portion 30, via the p-side electrode 41 and n-side electrode 42. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
