发明名称 Pt/PGO ETCHING PROCESS FOR USE IN FeRAM
摘要 PROBLEM TO BE SOLVED: To provide an etching process for minimizing the damage of etching on a ferroelectric layer. SOLUTION: The method for etching a noble metal upper electrode on a ferroelectric layer while sustaining ferroelectric characteristics thereof and removing etching residues comprises a step (14) for depositing a barrier layer on a prepared substrate, a step (18) for depositing a ferroelectric layer on a lower electrode layer deposited on the barrier layer, a step (22) for depositing an adhesive layer on an upper electrode layer deposited on the ferroelectric layer, a step (28) for patterning a hard mask deposited on the adhesive layer, a step (30) for etching the noble metal upper electrode layer by predetermined substrate RF bias power producing etching residues in the first etching process, and a step (32) for removing the etching residues in the first etching process by overetching the noble metal upper electrode layer and the ferroelectric layer by RF bias power lower than the predetermined RF bias power. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006060203(A) 申请公布日期 2006.03.02
申请号 JP20050215151 申请日期 2005.07.25
申请人 SHARP CORP 发明人 ZHANG FENGYAN;ULRICH BRUCE D;STECKER LISA H;SHIEN TEN SUU
分类号 H01L21/3065;H01L21/8246;H01L27/105 主分类号 H01L21/3065
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