| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the efficiency of a charge pump circuit while reducing a pattern area of the entire of a charge pump circuit. <P>SOLUTION: Both first and second charge transfer MOS transistors M1(N) and M2(N) are N channel transistors. In order to perform switching operation of the second charge transfer MOS transistor M2(N), one more stage of pumping packet is additionally provided. In order to attain a low on resistance by setting the VGS (gate-source voltage) at 2VDD when the second charge transfer MOS transistor M2(N) is turned on, output voltage B(2VDD) of the charge pump circuit is employed as the power supply of a second clock driver CD2 for driving the pumping packet. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
