| 摘要 |
A photomask for a micro lens in a CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to improve reproducibility of the micro lens without a reflow process, and to prevent cross-talk between each micro lens by precisely controlling a gap between the micro lenses. A photomask for a micro lens in a CMOS(Complementary Metal Oxide Semiconductor) image sensor comprises a substrate, a plurality of non-transmissive film patterns, and a plurality of semi-transmissive patterns. The substrate is transparent. The non-transmissive film patterns shield the light source. The semi-transmissive film patterns respectively surround the non-transmissive film patterns. A unit mask pattern(U) for a unit micro lens comprises a non-transmissive region(A) having the non-transmissive film patterns, a semi-transmissive region(B) having the semi-transmissive film patterns surrounding the non-transmissive patterns, and a full-transmissive region(C) defined as the substrate that is transparent at the light source, wherein the unit mask pattern is repeatedly arranged to form repeated patterns. |
