发明名称 |
BOTTOM GATE THIN FILM TRANSISTOR AND METHOD FABRICATING THEREOF |
摘要 |
<p>A bottom gate thin film transistor and method of fabricating the same are disclosed, in which a channel region is crystallized by a super grain silicon (SGS) crystallization method, including: forming a gate electrode and a gate insulating layer on an insulating substrate; forming an amorphous silicon layer on the gate insulating layer followed by forming a capping layer and a metal catalyst layer; performing heat treatment to crystallize the amorphous silicon layer into a polysilicon layer; and forming an etch stopper, source and drain regions and source and drain electrodes. The thin film transistor includes: an insulating substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a polysilicon layer formed on the gate insulating layer and crystallized by an SGS crystallization method; and source and drain regions and source and drain electrodes formed in a predetermined region of the substrate.</p> |
申请公布号 |
KR20060015183(A) |
申请公布日期 |
2006.02.16 |
申请号 |
KR20040064033 |
申请日期 |
2004.08.13 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
SEO, JIN WOOK;LEE, KI YONG;YANG, TAE HOON;PARK, BYOUNG KEON |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|