| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly versatile computing circuit capable of realizing a compact high-speed circuit such as a logic-in-memory and performing various operations. SOLUTION: This computing circuit is provided with a memory element having a variable resistive element R, in which a resistance condition is varied reversibly by impression of voltages of different polarities between one electrode and the other electrode, and transistors MRD, MRS, MW1, and MW2, one or more of which are connected to both ends of the memory element. When potential is respectively supplied to both ends of the memory elements via the transistors MRD, MRS, MW1 and MW2, data S are stored in the memory element, or computing on external data X, W, Y1, Y2 inputted via one of the transistors is carried out. A result of computing is outputted from the memory element in this computing circuit. COPYRIGHT: (C)2006,JPO&NCIPI |
