发明名称 CVD method for forming a porous low dielectric constant SiOCH film
摘要 <p>Organosilica glass and organic polymeric films useful for electronic devices and methods for making same are disclosed herein. In one embodiment of the present invention, there is provided a method for enhancing the chemical vapor deposition of a film comprising an organic species comprising: providing a substrate within a reaction chamber; introducing into the chamber gaseous chemical reagents comprising an organic precursor having carbon and hydrogen bonds contained therein and a rate enhancer wherein the rate enhancer is at least one member selected from the group consisting of an oxygen-containing compound; a peroxide compound having the formula R&lt;Sup&gt;1&lt;/Sup&gt;OOR&lt;Sup&gt;2&lt;/Sup&gt;; a peracid compound having the formula R&lt;Sup&gt;3&lt;/Sup&gt;C(O)OC(O)R&lt;Sup&gt;4&lt;/Sup&gt;; a fluorine-containing compound; and a heavy inert gas; and applying energy to the chemical reagents in the reaction chamber sufficient to induce the reaction of the reagents and deposit the film upon at least a portion of the substrate.</p>
申请公布号 EP1464726(A3) 申请公布日期 2006.02.01
申请号 EP20040007571 申请日期 2004.03.29
申请人 US 发明人 US;US;CA;CA;US;US;US
分类号 C23C16/40;H01L21/768;C23C16/30;C23C16/56;H01B3/46;H01L21/312;H01L21/316;H01L23/522 主分类号 C23C16/40
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