| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus provided with a variable capacitance diode, capacity of which can be arbitrarily changed during manufacturing process without changing a circuit pattern. SOLUTION: An n ion is implanted on the surface of a silicon substrate 10 in a parallel line state to provide diffusion regions 11 which serve as electrodes for the variable capacity diode. Control electrodes 14, 15 are formed on the surface between the diffusion regions 11 via comb shape gate oxide films 12, 13 which are formed in a nested manner. The gate oxide film 12 is formed to have a thickness of 2.5 nm, same as that of the gate oxide film of a transistor in a logic circuit 3, and the gate oxide film 13 is formed to have a thickness of 5.0 nm, same as that of the gate oxide film of a transistor in an input circuit 2. It is possible to change the capacity of the variable capacity diode without changing the circuit pattern by changing the component ratio of the two film thicknesses, or by cutting comb teeth by a laser beam after manufacturing. COPYRIGHT: (C)2006,JPO&NCIPI
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