| 摘要 |
<p>An active matrix substrate includes: a gate line (3); a source line (5); and a thin film transistor (2) provided in the vicinity of an intersection between the gate line (3) and the source line (5), the thin film transistor (2) including a gate electrode (11) connected to the gate line (3), a source electrode (15a) connected to the source line (5), and a drain electrode (15b) connected to a pixel electrode (6). An interlayer insulating film (17) is provided over the thin film transistor (2), the gate line (3), and the source line (5), and the pixel electrode (6) is provided on the interlayer insulating film (17), the pixel electrode (6) being connected to the drain electrode (15b) via a contact hole (7) formed in the interlayer insulating film (17), and a conductive layer (6;18) is formed so as to oppose a channel region (13) of the thin film transistor (2) via the interlayer insulating film (17).</p> |
