| 摘要 |
PROBLEM TO BE SOLVED: To reduce a size of a solid-state imaging device. SOLUTION: The solid-state imaging device comprises a first region demarcated on the principal plane of a semiconductor substrate, a second region demarcated adjacent to the first region in a first direction, and a third region demarcated adjacent to the second region in the first region. The first region contains a plurality of photoelectric conversion elements which accumulate signal charge according to an amount of incident light, and a vertical transfer channel which is formed in the vicinity of the plurality of photoelectric conversion elements and wherein the signal charge read out from the plurality of photoelectric conversion elements is transferred in the first direction as a whole. The second region contains a horizontal transfer channel wherein the signal charge transferred in the vertical transfer channel is transferred in a second direction perpendicular to the first one as a whole, a floating diffusion formed on the second direction side of an exit in the second direction of the horizontal transfer channel, and the first-stage drive FET of an amplifier. The third region contains a first-stage load FET, second-stage drive FET, second-stage load FET, third-stage drive FET, and third-stage load FET of the amplifier. COPYRIGHT: (C)2006,JPO&NCIPI
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