| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a compound semiconductor single crystal preventing the formation of a concave solid/liquid interface and restraining the generation of a polycrystal part. SOLUTION: In this method for manufacturing the compound semiconductor single crystal by liquid sealing Czochralski method, in which a crucible 12 containing a feed and a liquid sealing agent 19 is heated and the feed and the liquid sealing agent 19 are melt, and a seed crystal 16 contacted with the feed melt liquid 18 is drawn-up to grow a single crystal, the single crystal 17 is drawn-up at first at a specified initial drawing-up speed, and when the volume of the single crystal 17 reaches a specified percentage of the feed melt liquid 18 which was charged in the crucible 12, the drawing-up speed of the single crystal 17 is decreased. COPYRIGHT: (C)2006,JPO&NCIPI
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