Verfahren und Vorrichtung für das Wachstum einer epitaktischen Siliziumschicht, mit kontrolliertem Massendurchfluss der reaktiven Gase

摘要

In order to grow a silicon epitaxial layer on a silicon substrate wafer mounted on a rotating susceptor (4) within a chamber (2), reactive gases comprising or selected from a silicon source, a dopant and hydrogen are provided through a central part of the chamber and through a peripheral part of the chamber, the mass flow of at least one of the reactive gases being independently controlled. Apparatus for use in such a process comprises a central injector (18) for injecting reactive gas from a first gas feeder system (15a) into the central part of the chamber; peripheral injectors (17,19) for injecting reactive gas from a second gas feeder system (15b) into the periphery of the chamber; and first and second control means (20,21,22,23) for independently controlling the mass flows of reactive gas to the central injector and to the peripheral injectors, respectively.