SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

A power semiconductor device having a semiconductor element die-mount-connected onto a lead frame in a leadless manner. Die-mount-connection between a semiconductor element (1) and a lead frame (2) that have large thermal expansion coefficient difference between them, wherein the connection is made by an intermetallic compound layer (200) having a melting point of at least 260aeC or by a leadless solder having a melting point of 260aeC through 400aeC, and thermal stress caused by a temperature cycle is buffered by a metal layer (100) having a melting point of at least 260aeC. The leadless die-mount-connection can be made without being melted at reflowing and without causing chip-crack under a thermal stress.