SILICON WAFER, PROCESS FOR PRODUCING THE SAME AND METHOD OF GROWING SILICON SINGLE CRYSTAL

摘要

In the growing of a silicon single crystal free of Grown-in defects according to the CZ process with the use of a hot zone structure capable of realizing temperature gradient (Gc) at the crystal center being equal to or higher than temperature gradient (Ge) at the crystal periphery, crystal pulling is performed at a rate close to the critical rate at which a ring OSF generation region disappears at the crystal center while feeding an inert gas containing hydrogen into the pulling crucible. Thus, the critical rate at which a ring OSF region disappears at the crystal center can be raised, and the single crystal free of Grown-in defects wherein there is neither dislocation cluster nor COP over the entire region of as-grown crystal radial direction can be grown by pulling at a rate higher than in the prior art.