| 摘要 |
<p>An insulated gate semiconductor device, includes an isolating structure (8) shaped in a circulating section along the periphery of a semiconductor substrate (10) so as to isolate that part from an inside device region, a peripheral diffusion region (9) of the semiconductor substrate located outside the isolating structure, a plurality of cell structures defined in the device region and divided in segments by insulated trench-shaped gates (3) so as to have a base region (6) covered with an emitter region (5) in its upper surface, a collector region, and an emitter electrode (1) electrically connected to the emitter region and the base region, a dummy base region (7) contiguous to the cell structures and configured as a base region that has its upper surface left without the emitter region connected to the emitter electrode, and a connection part (15) to electrically connect the peripheral diffusion region to the emitter electrode.</p> |
