| 摘要 |
A semiconductor wafer according to the present invention has multiple epitaxial regions comprising planar epitaxial surfaces and edge surfaces, where the planar epitaxial surfaces are wafer bonded at different lateral positions to a host substrate, and an edge surface of each epitaxial region is bonded to an edge surface of an adjacent epitaxial region. This enables the fabrication of photonic integrated circuits that traverse the different regions, providing previously unattainable functionality, performance, or level of integration. The method of achieving this includes placing sections cleaved from various source wafers onto a single common host substrate, and applying a combination of vertical and lateral pressure to achieve bonding of both planar surfaces and edge surfaces.
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